DAC1003D160 datasheet(9/18 Pages) IDT

No de pièce	DAC1003D160

Description	Dual 10 bits DAC, up to 160 MHz, 2 x interpolation

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Fabricant	IDT [Integrated Device Technology]

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DAC1003D160_3

Product data sheet

Rev. 03 — 2 July 2012

9 of 18

Integrated Device Technology

DAC1003D160

Dual 10 bits DAC, up to 160 MHz, 2 x interpolation

[1]

Guaranteed by design.

Table 6.

Band gap

Band gap disable (GAPD)

Band gap input/output (GAPOUT)

Internal band gap

LOW

output (VGAPOUT = 1.2 V)

enable

HIGH

input

disable

In(o)

output noise current

-

120

-

pA/

Hz

Eoffset

offset error

relative to full-scale

-

0.3

-

%

EG

gain error

relative to full-scale

5.4

-

+5.4

%

GIQ

IQ gain mismatch

between I and Q, relative to

full-scale

-

0.2

-

%

SFDR

spurious free dynamic

range

fclk = 80 MHz; B = Nyquist

fo = 2.5 MHz at 0 dBFS

-

80

-

dBc

fo = 5 MHz at 0 dBFS

-

72

-

dBc

fo = 13 MHz at 0 dBFS

-

64

-

dBc

2H

second harmonic level

fo = 5 MHz

-

73

-

dBc

fo = 13 MHz

-

65

-

dBc

3H

third harmonic level

fo = 5 MHz

-

88

-

dBc

fo = 13 MHz

-

86

-

dBc

IMD2

second-order

intermodulation distortion

fclk = 80 MHZ; fo 1 = 10 MHz;

fo 2 = 12 MHz; B = Nyquist

-

65

-

dBc

IMD3

third-order intermodulation

distortion

fclk = 80 MHz; fo 1 = 10 MHz;

fo 2 = 12 MHz

-

84

-

dBc

THD

total harmonic distortion

fclk = 80 MHz; B = Nyquist; Tamb = 25 C

fo = 2.5 MHz

-

75

-

dBc

fo = 5 MHz

68

71

-

dBc

NSD

noise spectral density

fclk = 80 MHz

fo = 2.5 MHz

-

155

-

dBm/Hz

fo = 5 MHz

-

155

-

dBm/Hz

fo = 19 MHz

-

153

-

dBm/Hz

S/N

signal-to-noise ratio

fclk = 80 Msample/s; B = Nyquist

fo = 2.5 MHz

-

80

-

dBc

fo = 5 MHz

70

80

-

dBc

fo = 19 MHz

-

78

-

dBc

ACPR

adjacent channel power

ratio

baseband; 5 MHz channel spacing; B = 3.84 MHz

fo = 2.5 MHz

-

60

-

dBc

fo = 20 MHz

-

61

-

dBc

Table 5.

Characteristics …continued

VCCD = VCCA = 3.0 V to 3.6 V; AGND and DGND connected together; Tamb = 40 C to +85 C; typical values measured at

VCCD = VCCA = 3.3 V, IO(fs) = 20 mA and Tamb = 25 C; dynamic parameters measured using output schematic given in

Figure 10; unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Numéro de pièce similaire - DAC1003D160

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	DAC1003D160	120Kb / 19P	Dual 10 bits DAC, up to 160 MHz, 2 x interpolation Rev. 02-13 August 2008
Renesas Technology Corp	DAC1003D160	437Kb / 18P	Dual 10 bits DAC, up to 160 MHz, 2 x interpolation 2 July 2012
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Description similaire - DAC1003D160

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	DAC1003D160	120Kb / 19P	Dual 10 bits DAC, up to 160 MHz, 2 x interpolation Rev. 02-13 August 2008
Renesas Technology Corp	DAC1003D160	437Kb / 18P	Dual 10 bits DAC, up to 160 MHz, 2 x interpolation 2 July 2012
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Integrated Device Techn...	DAC1403D160	439Kb / 18P	Dual 14 bits DAC, up to 160 MHz, 2 x interpolating
NXP Semiconductors	DAC1403D160	120Kb / 19P	Dual 14 bits DAC, up to 160 MHz, 2 x interpolating Rev. 02-14 August 2008
Renesas Technology Corp	DAC1203D160	438Kb / 18P	Dual 12 bits DAC, up to 160 MHz, 2 x interpolating 2 July 2012
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