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CSD87331Q3D Fiches technique(PDF) 10 Page - Texas Instruments |
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CSD87331Q3D Fiches technique(HTML) 10 Page - Texas Instruments |
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10 / 21 page  80 82 84 86 88 90 92 94 96 0 2 4 6 8 10 12 14 16 Output Current (A) PowerBlock HS/LS RDS(ON) = 18mΩ/6.7mΩ Discrete HS/LS RDS(ON) = 18mΩ/6.7mΩ Discrete HS/LS RDS(ON) = 18mΩ/5.5mΩ VGS = 5V VIN = 12V VOUT = 1.3V LOUT = 1µH fSW = 500kHz TA = 25ºC 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 Output Current (A) PowerBlock HS/LS RDS(ON) = 18mΩ/6.7mΩ Discrete HS/LS RDS(ON) = 18mΩ/6.7mΩ Discrete HS/LS RDS(ON) = 18mΩ/5.5mΩ VGS = 5V VIN = 12V VOUT = 1.3V LOUT = 1µH fSW = 500kHz TA = 25ºC CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com The combination of TI ’s latest generation silicon and optimized packaging technology has created a benchmarking solution that outperforms industry standard MOSFET chipsets of similar RDS(ON) and MOSFET chipsets with lower RDS(ON). Figure 30 and Figure 31 compare the efficiency and power loss performance of the CSD87331Q3D versus industry standard MOSFET chipsets commonly used in this type of application. This comparison purely focuses on the efficiency and generated loss of the power semiconductors only. The performance of CSD87331Q3D clearly highlights the importance of considering the Effective AC On-Impedance (ZDS(ON)) during the MOSFET selection process of any new design. Simply normalizing to traditional MOSFET RDS(ON) specifications is not an indicator of the actual in-circuit performance when using TI’s Power Block technology. Figure 30. Figure 31. The chart below compares the traditional DC measured RDS(ON) of CSD87331Q3D versus its ZDS(ON). This comparison takes into account the improved efficiency associated with TI ’s patented packaging technology. As such, when comparing TI ’s Power Block products to individually packaged discrete MOSFETs or dual MOSFETs in a standard package, the in-circuit switching performance of the solution must be considered. In this example, individually packaged discrete MOSFETs or dual MOSFETs in a standard package would need to have DC measured RDS(ON) values that are equivalent to CSD87331Q3D’s ZDS(ON) value in order to have the same efficiency performance at full load. Mid to light-load efficiency will still be lower with individually packaged discrete MOSFETs or dual MOSFETs in a standard package. Comparison of RDS(ON) vs. ZDS(ON) HS LS Parameter Typ Max Typ Max Effective AC On-Impedance ZDS(ON) (VGS = 5V) 18 - 5.5 - DC Measured RDS(ON) (VGS = 4.5V) 18 22 6.7 8 10 Submit Documentation Feedback Copyright © 2011–2012, Texas Instruments Incorporated |
Numéro de pièce similaire - CSD87331Q3D |
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Description similaire - CSD87331Q3D |
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