30V Power33 MOSFeTs

Reduce Board Space with

Best-in-Class Power Density

Power efficiency standards and end-system requirements are forcing design-

ers to seek energy-efficient solutions that help shrink their applications’ power

supply form factor. Fairchild’s FDMC8010 30V Power33 MOSFET meets these

needs while improving power density—in a 3.3mm x 3.3mm PQFN form factor

that has a 66% footprint area savings.

applications where the lowest R

1/16th brick DC-DC converter applications, the Power33 MOSFET’s R

only 1.3mΩ max, is 25% smaller than the competitive solution in this footprint.

Additionally, the device reduces conduction losses, thereby improving thermal

efficiency by up to 25%.

Advantages

• Highperformancetechnology

forbest-in-classR

1.3mΩmax

• 3.3mmx3.3mmindustry-

standardformfactor,

PQFN–savesboardspace

• Lowerpowerconductionloss

• Higherpowerdensity

• Higherefficiency

Applications

• IsolatedDC-DC

synchronousrectification

• Point-of-load

synchronousbuckconversion

• Highefficiencyload

switchandlow-sideswitching

• O-ringFET

For more information, please visit:

fairchildsemi.com/pf/FD/FDMC8010.html

Shrink Your Design While Delivering Best-in-Class Power Density

Product

Number

BV

DSS

(V)

i

T

R

Q

0V to

4.5V

Q

gd

(nC)

pF

C

iSS

Package

FDMC8010

25

30

10V

4.5V

45

9.5

4405

PQFN

3.3mm x 3.3mm

(Power33)

1.3mΩ

1.8mΩ