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CSD16342Q5A Fiches technique(PDF) 1 Page - Texas Instruments |
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CSD16342Q5A Fiches technique(HTML) 1 Page - Texas Instruments |
1 / 12 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0095-01 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to- Source Voltage - V TC = 25°C TC = 125ºC ID = 20A G001 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 Qg - Gate Charge - nC (nC) ID =20A VDD = 12.5V G001 CSD16342Q5A www.ti.com SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16342Q5A 1 FEATURES PRODUCT SUMMARY 2 • Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V • Resistance Rated at VGS = 2.5V Qg Gate Charge Total (4.5V) 6.8 nC • Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 1.2 nC VGS = 2.5V 6.1 m Ω • Low Thermal Resistance RDS(on) Drain to Source On Resistance VGS = 4.5V 4.3 m Ω • Avalanche Rated VGS = 8V 3.8 m Ω • Pb Free Terminal Plating Vth Threshold Voltage 0.85 V • RoHS Compliant • Halogen Free ORDERING INFORMATION • SON 5mm x 6mm Plastic Package Device Package Media Qty Ship SON 5 × 6 Plastic 13-inch Tape and CSD16342Q5A 2500 Package reel Reel APPLICATIONS • Point-of-Load Synchronous Buck Converter ABSOLUTE MAXIMUM RATINGS for Applications in Networking, Telecom and TA = 25°C unless otherwise stated VALUE UNIT Computing Systems VDS Drain to Source Voltage 25 V • Optimized for Control or Synchronous FET VGS Gate to Source Voltage +10 / –8 V Applications Continuous Drain Current, TC = 25°C 100 A ID Continuous Drain Current(1) 21 A DESCRIPTION IDM Pulsed Drain Current, TA = 25°C (2) 131 A The NexFET™ power MOSFET has been designed PD Power Dissipation(1) 3 W to minimize losses in power conversion and optimized TJ, Operating Junction and Storage –55 to 150 °C for 5V gate drive applications. TSTG Temperature Range Avalanche Energy, single pulse EAS 80 mJ Top View ID = 40A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 40°C/W on 1in 2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300μs, duty cycle ≤2% RDS(ON) vs VGS Gate Charge 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2012, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Numéro de pièce similaire - CSD16342Q5A |
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Description similaire - CSD16342Q5A |
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