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CSD16342Q5A Fiches technique(PDF) 1 Page - Texas Instruments

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No de pièce CSD16342Q5A
Description  N-Channel NexFET??Power MOSFETs
Download  12 Pages
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

CSD16342Q5A Fiches technique(HTML) 1 Page - Texas Instruments

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D
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D
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G
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S
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S
P0095-01
0
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20
0
1
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VGS - Gate-to- Source Voltage - V
TC = 25°C
TC = 125ºC
ID = 20A
G001
0
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2
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5
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0
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Qg - Gate Charge - nC (nC)
ID =20A
VDD = 12.5V
G001
CSD16342Q5A
www.ti.com
SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16342Q5A
1
FEATURES
PRODUCT SUMMARY
2
Optimized for 5V Gate Drive
VDS
Drain to Source Voltage
25
V
Resistance Rated at VGS = 2.5V
Qg
Gate Charge Total (4.5V)
6.8
nC
Ultra Low Qg and Qgd
Qgd
Gate Charge Gate to Drain
1.2
nC
VGS = 2.5V
6.1
m
Low Thermal Resistance
RDS(on)
Drain to Source On Resistance
VGS = 4.5V
4.3
m
Avalanche Rated
VGS = 8V
3.8
m
Pb Free Terminal Plating
Vth
Threshold Voltage
0.85
V
RoHS Compliant
Halogen Free
ORDERING INFORMATION
SON 5mm x 6mm Plastic Package
Device
Package
Media
Qty
Ship
SON 5 × 6 Plastic
13-inch
Tape and
CSD16342Q5A
2500
Package
reel
Reel
APPLICATIONS
Point-of-Load Synchronous Buck Converter
ABSOLUTE MAXIMUM RATINGS
for Applications in Networking, Telecom and
TA = 25°C unless otherwise stated
VALUE
UNIT
Computing Systems
VDS
Drain to Source Voltage
25
V
Optimized for Control or Synchronous FET
VGS
Gate to Source Voltage
+10 / –8
V
Applications
Continuous Drain Current, TC = 25°C
100
A
ID
Continuous Drain Current(1)
21
A
DESCRIPTION
IDM
Pulsed Drain Current, TA = 25°C
(2)
131
A
The NexFET™ power MOSFET has been designed
PD
Power Dissipation(1)
3
W
to minimize losses in power conversion and optimized
TJ,
Operating Junction and Storage
–55 to 150
°C
for 5V gate drive applications.
TSTG
Temperature Range
Avalanche Energy, single pulse
EAS
80
mJ
Top View
ID = 40A, L = 0.1mH, RG = 25Ω
(1) Typical RθJA = 40°C/W on 1in
2 Cu (2 oz.) on 0.060" thick FR4
PCB.
(2) Pulse width
≤300μs, duty cycle ≤2%
RDS(ON) vs VGS
Gate Charge
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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