N-HFA16PB60 datasheet(2/6 Pages) NELLSEMI

No de pièce	N-HFA16PB60

Description	FRED Ultrafast Soft Recovery Diode, 16 A

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Fabricant	NELLSEMI [Nell Semiconductor Co., Ltd]

Site Internet	http://www.nellsemi.com

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THERMAL - MECHANICAL SPECIFICATIONS PER LEG

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Lead temperature

Tlead

0.063'' from case (1.6 mm) for 10 s

–

Junction to case,

single leg conduction

RthJC

-

K/W

Junction to case,

both legs conducting

-

Thermal resistance,

junction to ambient

RthJA

Typical socket mount

–

Thermal resistance,

case to heatsink

RthCS

Mounting surface, flat, smooth and greased

-

0.25

-

Weight

-

6.0

-

g

-

0.21

-

oz.

Mounting torque

6.0

(5.0)

-

12

(10)

kgf . cm

(lbf . in)

Marking device

Case style TO-247AC (JEDEC)

Nell High Power Products

SEMICONDUCTOR

RoHS

SEMICONDUCTOR

RoHS

Page 2 of 6

HFA16PA60

°C

ºC unless otherwise specified)

= 25

PARAMETER

SYMBOL

TEST CONDITIONS

V

-

= 32 A

IF

-

µA

-

600

1.45

10

1.0

-

400

pF

25

ELECTRICAL SPECIFICATIONS

(TJ

Cathode to anode

breakdown voltage

VBR

= 100 µA

IR

Maximum forward voltage

= 16 A

IF

= 16 A, T

I

= 125 ºC

F

J

Maximum reverse

leakage current

IRM

Junction capacitance

1.60

1.75

-

ºC unless otherwise specified)

= 25

PARAMETER

SYMBOL

TEST CONDITIONS

ns

-

42

74

DYNAMIC RECOVERY CHARACTERISTICS PERLEG

(TJ

Reverse recovery time

IF = 1.0 A, dI /dt = -200 A/µs, V =30 V, T = 25°C

F

R

J

19

-

A

-

6.5

4.0

-

nC

-

220

80

-

Peak recovery current

Reverse recovery charge

trr

trr1

trr2

IRRM1

IRRM2

Qrr1

Qrr2

T = 125 ºC

J

T = 125 ºC

J

T = 125 ºC

J

T = 25 ºC

J

T = 25 ºC

J

T = 25 ºC

J

I = 16A

F

dI /dt = -200 A/µs

F

V = 200 V

R

-

VFM

CT

V = 200V

R

T = 125°C, V = V rated

J

R

V = V rated

R

I = 0.5A, I = 1.0A, I

= 250mA (RG#1 CKT)

F

R

RR

22

-

1.85

UNITS

MAX.

TYP.

MIN.

UNITS

MAX.

TYP.

MIN.

A/µs

-

160

-

dl

/dt2

(rec)M

T = 125 ºC

J

T = 25 ºC

J

-

nH

12

Series inductance

LS

50

1000

-

Measured lead to lead 5 mm from package body

dl

/dt1

(rec)M

120

6.0

60

30

10

600

180

1.65

2.0

N-HFA16PB60

188

40

1.7

300

40

www.nellsemi.com

Peak rate of fall of recovery

current during tb

Numéro de pièce similaire - N-HFA16PB60

Fabricant	No de pièce	Fiches technique	Description
Nell Semiconductor Co.,...	N-HFA16TB120	335Kb / 6P	FRED Ultrafast Soft Recovery Diode, 16 A

More results

Description similaire - N-HFA16PB60

Fabricant	No de pièce	Fiches technique	Description
Nell Semiconductor Co.,...	N-HFA16TB120	335Kb / 6P	FRED Ultrafast Soft Recovery Diode, 16 A
	N-30EPU06	1Mb / 6P	FRED Ultrafast Soft Recovery Diode, 30 A
	N-30EPU12	1Mb / 6P	FRED Ultrafast Soft Recovery Diode, 30 A
	N-HFA08TB120	324Kb / 6P	FRED Ultrafast Soft Recovery Diode, 8 A
	N-HFA15PB60	953Kb / 6P	FRED Ultrafast Soft Recovery Diode, 15 A
	N-40EPU06	1Mb / 6P	FRED Ultrafast Soft Recovery Diode, 40 A
	N-HFA15PB120	871Kb / 5P	FRED Ultrafast Soft Recovery Diode, 15 A
	N-30ETU06	1Mb / 6P	FRED Ultrafast Soft Recovery Diode, 30 A
	N-30ETU12	1Mb / 6P	FRED Ultrafast Soft Recovery Diode, 30 A
	N-60EPU06	2Mb / 6P	FRED Ultrafast Soft Recovery Diode, 60 A

More results

N-HFA16PB60 Fiches technique(PDF) 2 Page - Nell Semiconductor Co., Ltd

N-HFA16PB60 Fiches technique(HTML) 2 Page - Nell Semiconductor Co., Ltd

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