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PZT2222 Fiches technique(PDF) 2 Page - Siemens Semiconductor Group |
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PZT2222 Fiches technique(HTML) 2 Page - Siemens Semiconductor Group |
2 / 6 page Semiconductor Group 2 PZT 2222 PZT 2222 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. DC current gain1) IC = 0.1 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V PZT 2222 PZT 2222 A V Collector-emitter breakdown voltage IC = 10 mA, IB = 0 PZT 2222 PZT 2222 A V(BR)CE0 30 40 – – – – Collector-emitter cutoff current VCE = 30 V, –VBE = 0.5 V ICEV ––50 Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10 µA, IB = 0 PZT 2222 PZT 2222 A V(BR)CB0 60 75 – – – – Emitter-base breakdown voltage IE = 10 µA, IE = 0 PZT 2222 PZT 2222 A V(BR)EB0 5 6 – – – – nA Emitter-base cutoff current VEB = 3 V, IC = 0 IEB0 ––10 nA nA µA µA Collector-base cutoff current VCB = 50 V, IE = 0 PZT 2222 PZT 2222 A VCB = 50 V, IE = 0, TA = 150 ˚C PZT 2222 PZT 2222 A ICB0 – – – – – – – – 20 10 20 10 Emitter-base cutoff current VCE = 30 V, –VBE = 0.5 V IEBV ––50 – hFE 35 50 75 100 30 40 – – – – – – – – – 300 – – 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. |
Numéro de pièce similaire - PZT2222 |
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Description similaire - PZT2222 |
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