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CDBHD220-G Fiches technique(PDF) 1 Page - Comchip Technology |
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CDBHD220-G Fiches technique(HTML) 1 Page - Comchip Technology |
1 / 4 page Low VF SMD Schottky Bridge Rectifiers Reverse Voltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device Page 1 REV:B Features Mechanical data -Case: TO-269AA, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: Marked on body. -Weight:0.22 gram(approx.). CDBHD220-G Thru. CDBHD2100-G Maximum Ratings and Electrical Characteristics QW-BL011 Comchip Technology CO., LTD. TO-269AA Dimensions in inches and (millimeters) .165(4.2) .106(2.7) .275(7.0) .008(0.2) .043(1.1) .106(2.7) .193(4.9) .031(0.8) .150(3.8) .090(2.3) MAX .027(0.7) .090(2.3) .177(4.5) + .019(0.5) ~ ~ -Schottky barrier chips in TO-269AA bridge. -Metal semiconductor junction with guard ring. -Silicon epitaxial planar chips. -Very low forward drop down voltage. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications. -Lead-free parts meet RoHS requirments. -UL recognized file # E321971 -Mounting Position: Any. Peak Forward surge current Reverse current Diode junction capacitance Units 20 14 0.5 40 28 40 60 42 60 80 56 80 100 70 100 V V A A V °C/W °C Symbol VRMS VR Thermal resistance 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR=VRRM TA=100°C Junction to ambient Junction to lead f=1MHz and applied 4V DC reverse voltage Max. DC blocking voltage Max. RMS voltage VRRM VF 20 0.70 0.85 V Max. Instantaneous forward voltage at 2.0A IAV IFSM IR RθJA RθJL CJ -55 to +125 150 20 85 0.5 mA pF 20 50 2.0 Max. repetitive peak reverse voltage Conditions Parameter CDBHD 220-G CDBHD 240-G CDBHD 260-G CDBHD 280-G CDBHD 2100-G VR=VRRM TA=25°C 2.0X2.0”(5.0x5.0mm) copper pad, See fig.1 Average Forward rectified current -65 to +175 TSTG °C Sorage temperature Operating junction temperature TJ -55 to +150 MDS XXX |
Numéro de pièce similaire - CDBHD220-G |
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Description similaire - CDBHD220-G |
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