Moteur de recherche de fiches techniques de composants électroniques |
|
CDBHD120L-G Fiches technique(PDF) 1 Page - Comchip Technology |
|
CDBHD120L-G Fiches technique(HTML) 1 Page - Comchip Technology |
1 / 4 page Low VF Schottky Bridge Rectifiers Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Page 1 REV:B Features Mechanical data CDBHD120L-G Thru. CDBHD1100L-G Maximum Ratings and Electrical Characteristics QW-BL009 Comchip Technology CO., LTD. Maximum repetitive peak reverse voltage Maximum DC blocking voltage Maximum RMS voltage Peak surge forward current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. instantaneous forward voltage at 1.0A (Note 1) Max. DC reverse current at rated DC blocking voltage Typical thermal resistance (Note 3) Operating junction temperature Range Storage temperature Range Units Symbol Parameter VRRM VDC VRMS IFSM IAV VF IR RθJA RθJL TJ TSTG V V V A A V mA °C/W °C °C Dimensions in inches and (millimeter) Mini DIP/To-269AA .008 (0.2) Max. .106 (2.7) .090 (2.3) .114(2.90) .094(2.40 ) .051 (1.3) .035 (0.9) .193(4.90 ) .177(4.50 ) .067(1.7) .05 7(1.3) .031(0.8) .019(0.5) .016(0.41 ) .006 (0.15 ) + – ~ ~ .043 (1.1) .027 (0.7) .106(2.7) .090(2.3) C .02(0.5) - Metal-Semiconductor junction with guard ring - High surge current capability - Silicon epitaxial planar chips - For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications - Lead-free part, meet RoHS requirements - Low Vf Schottky barrier chips in bridge - Case: Mini-Dip bridge (TO-269AA) plastic molded case - Epoxy: UL94-V0 rated flame retardant - Terminals: Solderable per MIL-STD-750 Method 2026 - Polarity: As marked on body - Mounting Position: Any - Weight: 0.0078 ounces, 0.22 grams CDBHD 120L-G CDBHD 140L-G CDBHD 160L-G CDBHD 180L-G CDBHD 1100L-G 40 20 60 80 100 28 14 42 56 70 40 20 60 80 100 30.0 0.625 0.75 0.44 0.50 20.0 TA=25°C TA=100°C IR 85.0 20.0 -55 to +125 -55 to +150 Typical junction Capacitance (Note 2) P F CJ 250 125 1.0 Max. average forward current 0.2*0.2”(5.0*5.0mm)copper pad area,see Figure 1 Note 1. Pulse test: 300µS pulse width, 1% duty cycle 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts 3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2x0.2”(5.0x5.0mm) copper pad areas. |
Numéro de pièce similaire - CDBHD120L-G_12 |
|
Description similaire - CDBHD120L-G_12 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |