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CDBA1100-G Fiches technique(PDF) 2 Page - Comchip Technology

No de pièce CDBA1100-G
Description  SMD Schottky Barrier Rectifiers
Download  4 Pages
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Fabricant  COMCHIP [Comchip Technology]
Site Internet  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBA1100-G Fiches technique(HTML) 2 Page - Comchip Technology

  CDBA1100-G Datasheet HTML 1Page - Comchip Technology CDBA1100-G Datasheet HTML 2Page - Comchip Technology CDBA1100-G Datasheet HTML 3Page - Comchip Technology CDBA1100-G Datasheet HTML 4Page - Comchip Technology  
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RATING AND CHARACTERISTIC CURVES (CDBA120-G thru CDBA1100-G)
Percent of Rated Peak Reverse Voltage (%)
140
80
60
120
0
Fig.5 - Typical Reverse Characteristics
0.01
0.1
10
100
Instantaneous Forward Voltage, (V)
0
Fig.3 - Forward Characteristics
0.01
0.1
1.00
10
0.4
Reverse Voltage, (V)
0.1
Fig.4 - Typical Junction Capacitance
10
1000
4.0
10.0
100
Ambient Temperature, (°C)
Fig.1 - Foward Current Derating Curve
0
0.4
0.6
1.0
Comchip Technology CO., LTD.
Page 2
REV:C
1.4
0
100
175
0.2
0.8
20
1.2
SMD Schottky Barrier Rectifiers
1.0
Number of Cycles at 60Hz
Fig.2 - MAXMUM Non-Repetitive
0
20
30
1
10
100
10
8.3ms single half sine-wave,
(JEDEC Method) TJ=TJMax
25
50
75
150
125
Single Phase
Half wavef 60Hz
Reslstive or
Inductive Load
100
O
TJ=25 C f=1MHz
0.2
0.6
0.8
1.0
Pulse width=300us
1% duty cycle
O
TJ=25 C
1.0
0.001
40
100
O
TJ=25 C
O
TJ=100 C
O
TJ=125 C
Surge Current


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