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UF520 Fiches technique(PDF) 3 Page - Unisonic Technologies |
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UF520 Fiches technique(HTML) 3 Page - Unisonic Technologies |
3 / 6 page UF520 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-659.a ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 100 V Drain-Source Leakage Current IDSS VDS=95V, VGS=0V 250 µA Gate- Source Leakage Current IGSS VGS=±20V, VDS=0V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.6A (Note 1) 0.25 0.27 Ω On State Drain Current (Note 1) ID(ON) VGS=10V, VDS>ID(ON)×RDS(ON)MAX 9.2 A DYNAMIC PARAMETERS Input Capacitance CISS 350 pF Output Capacitance COSS 130 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 25 pF SWITCHING PARAMETERS Total Gate Charge QG 10 30 nC Gate to Source Charge QGS 2.5 nC Gate to Drain Charge QGD VGS=10V, ID=9.2A, VDS=0.8*Rated BVDSS, IG(REF)=1.5mA (Note 2) 2.5 nC Turn-ON Delay Time tD(ON) 9 13 ns Rise Time tR 30 63 ns Turn-OFF Delay Time tD(OFF) 18 70 ns Fall-Time tF VDD=50V, ID≈9.2A, RG=18Ω, RL=5.5 Ω (Note 3) 20 59 ns Notes: 1. Pulse test: pulse width≤300µs, duty cycle≤2% 2. Gate Charge is Essentially Independent of Operating Temperature 3. MOSFET Switching Times are Essentially Independent of Operating Temperature SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source to Drain Diode Voltage VSD TJ=25°C,ISD=9.2A,VGS=0V (Note 1) 2.5 V Continuous Source to Drain Current ISD 9.2 A Pulse Source to Drain Current (Note 2) ISDM Note 3 37 A Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve 3. Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode. |
Numéro de pièce similaire - UF520 |
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Description similaire - UF520 |
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