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UF520 Fiches technique(PDF) 3 Page - Unisonic Technologies

No de pièce UF520
Description  9.2A, 100V N-CHANNEL POWER MOSFET
Download  6 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF520 Fiches technique(HTML) 3 Page - Unisonic Technologies

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UF520
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-659.a
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=95V, VGS=0V
250
µA
Gate- Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5.6A (Note 1)
0.25 0.27
On State Drain Current (Note 1)
ID(ON)
VGS=10V, VDS>ID(ON)×RDS(ON)MAX
9.2
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
350
pF
Output Capacitance
COSS
130
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
25
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
10
30
nC
Gate to Source Charge
QGS
2.5
nC
Gate to Drain Charge
QGD
VGS=10V, ID=9.2A, VDS=0.8*Rated
BVDSS, IG(REF)=1.5mA (Note 2)
2.5
nC
Turn-ON Delay Time
tD(ON)
9
13
ns
Rise Time
tR
30
63
ns
Turn-OFF Delay Time
tD(OFF)
18
70
ns
Fall-Time
tF
VDD=50V, ID≈9.2A, RG=18Ω,
RL=5.5 Ω (Note 3)
20
59
ns
Notes: 1. Pulse test: pulse width≤300µs, duty cycle≤2%
2. Gate Charge is Essentially Independent of Operating Temperature
3. MOSFET Switching Times are Essentially Independent of Operating Temperature
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Source to Drain Diode Voltage
VSD
TJ=25°C,ISD=9.2A,VGS=0V (Note 1)
2.5
V
Continuous Source to Drain Current
ISD
9.2
A
Pulse Source to Drain Current (Note 2)
ISDM
Note 3
37
A
Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance
curve
3. Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode.


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