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NE202930-T1 Fiches technique(PDF) 1 Page - Renesas Technology Corp |
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NE202930-T1 Fiches technique(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page R09DS0003EJ0100 Rev.1.00 Page 1 of 6 Jul 14, 2010 PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor FEATURES • High transition frequency fT = 11 GHz TYP. • Ideal for low noise and low distortion amplification • Suitable for equipments of low collector voltage (Less than 5 V) • Suitable for up to 1 GHz applications APPLICATIONS • LNA (Low Noise Amplifier) or power splitter for digital-TV OUTLINE RENESAS Package code: 30 (Package name: 3-pin super minimold (30 PKG)) Note: Marking is "R7D" 1. Emitter 2. Base 3. Collector ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form NE202930-T1 NE202930-T1-A 3-pin super minimold (30 PKG) (Pb-Free) R7D • Embossed tape 8 mm wide • Pin 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE202930 ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage (Base Short) VCES 9 V Collector to Emitter Voltage (Base Open) VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 100 mA Total Power Dissipation Note Ptot 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note: Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 |
Numéro de pièce similaire - NE202930-T1 |
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