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CLY10 Datasheet(Fiches technique) 2 Page - Siemens Semiconductor Group

Numéro de pièce CLY10
Description  GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
Télécharger  7 Pages
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
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GaAs FET
CLY 10
_________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 2/7
17.12.96
HL EH PD 21
Electrical characteristics (TA = 25°C , unless otherwise specified)
Characteristics
Symbol
min
typ
max
Unit
Drain-source saturation current
VDS = 3 V
VGS = 0 V
IDSS
1.2
1.6
2.4
A
Drain-source pinch-off current
VDS = 3 V
VGS = -3.8 V
ID
-
-
200
µA
Gate pinch-off current
VDS = 3 V
VGS = -3.8 V
IG
-10
35
µA
Pinch-off Voltage
VDS= 3 V
ID=200µA
VGS(p)
-3.8
-2.8
-1.8
V
Small Signal Gain
*)
VDS = 3 V
ID = 700 mA
f = 1.8 GHz
Pin = 0 dBm
G
-9
-
dB
Small Signal Gain
**)
VDS = 3 V
ID = 700 mA
f = 1.8 GHz
Pin = 0 dBm
G
-8
-
dB
Output Power
VDS = 3 V
ID = 700 mA
f = 1.8 GHz
Pin = 20.5 dBm
Po
28
28.5
-
dBm
Output Power
VDS = 5 V
ID = 700 mA
f = 0.9 GHz
Pin = 20 dBm
Po
32.0
32.5
-
dBm
1dB-Compression Point
VDS = 3 V
ID = 700 mA
f = 1.8 GHz
P1dB
-
28.5
-
dBm
1dB-Compression Point
VDS = 5 V
ID = 700 mA
f = 1.8GHz
P1dB
-
32.5
-
dBm
Power Added Efficiency
VDS = 5 V
ID = 700 mA
f = 1.8 GHz
Pin = 20 dBm
PAE
40
55
-
%
*) Matching conditions for maximum small signal gain: f = 1.8 GHz
Source Match:
Γ
ms: MAG = 0.70, ANG -116°; Load Match:
Γ
ml: ;MAG 0.68, ANG -145°
**) Power matching conditions: f = 1.8 GHz
Source Match:
Γ
ms: MAG = 0.70, ANG -120°; Load Match:
Γ
ml: ;MAG 0.78, ANG -130°




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