BUZ70L datasheet(8/9 Pages) SIEMENS

No de pièce	BUZ70L

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

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Fabricant	SIEMENS [Siemens Semiconductor Group]

Site Internet	http://www.siemens.com/

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8 / 9 page

Semiconductor Group

8

07/96

BUZ 70 L

Avalanche energy

E

AS = ƒ(Tj)

parameter:

ID = 12 A, VDD = 25 V

R

GS = 25 Ω, L = 48.6 µH

20

40

60

80

100

120

°C

160

T

j

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

mJ

6.5

E

AS

Typ. gate charge

VGS = ƒ(QGate)

parameter:

I

D puls = 18 A

0

4

8

12

16

20

nC

26

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

-60

-20

20

60

100

°C

160

T

j

54

56

58

60

62

64

66

68

V

71

V

(BR)DSS

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