BUZ103 datasheet(2/9 Pages) SIEMENS

No de pièce	BUZ103

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

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Fabricant	SIEMENS [Siemens Semiconductor Group]

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2 / 9 page

Semiconductor Group

2

07/96

BUZ 103

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID, Tj = -40 °C

V(BR)DSS

50

-

V

Gate threshold voltage

VGS=VDS, ID = 1 mA

VGS(th)

2.1

3

4

Zero gate voltage drain current

VDS = 50 V, VGS = 0 V, Tj = 25 °C

VDS = 50 V, VGS = 0 V, Tj = -40 °C

VDS = 50 V, VGS = 0 V, Tj = 150 °C

IDSS

-

10

1

0.1

100

1

µA

nA

µA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS

-

10

100

nA

Drain-Source on-resistance

VGS = 10 V, ID = 28 A

RDS(on)

-

0.03

0.04

Ω

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BUZ103 Fiches technique(PDF) 2 Page - Siemens Semiconductor Group

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