BUZ103 datasheet(8/9 Pages) SIEMENS

No de pièce	BUZ103

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

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Fabricant	SIEMENS [Siemens Semiconductor Group]

Site Internet	http://www.siemens.com/

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8 / 9 page

Semiconductor Group

8

07/96

BUZ 103

Avalanche energy

E

AS = ƒ(Tj)

parameter:

ID = 40 A, VDD = 25 V

R

GS = 25 Ω, L = 63 µH

20

40

60

80

100

120

140

°C

180

T

j

0

10

20

30

40

50

60

70

80

90

mJ

110

E

AS

Typ. gate charge

VGS = ƒ(QGate)

parameter:

I

D puls = 60 A

0

5

10

15

20

25

30

35

nC

45

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

-60

-20

20

60

100

°C

180

T

j

47

48

49

50

51

52

53

54

55

56

57

58

59

60

V

62

V

(BR)DSS

Numéro de pièce similaire - BUZ103

Fabricant	No de pièce	Fiches technique	Description
List of Unclassifed Man...	BUZ103	2Mb / 31P	SEMICONDUCTORS
Inchange Semiconductor ...	BUZ103	332Kb / 2P	isc N-Channel MOSFET Transistor
Siemens Semiconductor G...	BUZ103AL	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ103S	121Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature)
	BUZ103SL	119Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

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Description similaire - BUZ103

Fabricant	No de pièce	Fiches technique	Description
Siemens Semiconductor G...	BUZ104	208Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ101	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
	BUZ342	214Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance)
	BUZ104L	209Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance)
	BUZ102	183Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ100	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ101S	69Kb / 8P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
	BUZ103AL	185Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ102AL	182Kb / 9P	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)
	BUZ101SL-4	90Kb / 8P	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

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BUZ103 Fiches technique(PDF) 8 Page - Siemens Semiconductor Group

BUZ103 Fiches technique(HTML) 8 Page - Siemens Semiconductor Group

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