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2N2918 Fiches technique(PDF) 1 Page - Central Semiconductor Corp |
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2N2918 Fiches technique(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page 2N2918 DUAL SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2918 is a Dual Silicon NPN Transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 30 mA Power Dissipation (One Die) PD 300 mW Power Dissipation (Both Dice) PD 500 mW Power Dissipation (One Die, TC=25°C) PD 750 mW Power Dissipation (Both Dice, TC=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=45V 10 nA ICEO VCE=5.0V 2.0 nA IEBO VEB=5.0V 2.0 nA BVCBO IC=10μA 45 V BVCEO IC=10mA 45 V BVEBO IE=10μA 6.0 V VCE(SAT) IC=1.0mA, IB=0.1mA 0.35 V VBE(ON) VCE=5.0V, IC=100μA 0.70 V hFE VCE=5.0V, IC=10μA 150 600 hFE VCE=5.0V, IC=10μA, TA=–55°C 30 hFE VCE=5.0V, IC=100μA 225 hFE VCE=5.0V, IC=1.0mA 300 fT VCE=5.0V, IC=500μA, f=20MHz 60 MHz Cob VCB=5.0V, IE=0, f=140kHz 6.0 pF NF VCE=5.0V, IC=10μA, RS=10kΩ, f=1.0kHz, BW=200Hz 3.0 dB hFE1/hFE2 VCE=5.0V, IC=100μA 0.8 1.0 |VBE1-VBE2| VCE=5.0V, IC=10μA 10 mV |VBE1-VBE2| VCE=5.0V, IC=100μA 5.0 mV |VBE1-VBE2| VCE=5.0V, IC=1.0mA 10 mV Δ(VBE1-VBE2) VCE=5.0V, IC=100μA, TA=–55°C to +25°C 1.6 mV Δ(VBE1-VBE2) VCE=5.0V, IC=100μA, TA=+25°C to +125°C 2.0 mV TO-78 CASE R1 (4-March 2011) www.centra lsemi.com |
Numéro de pièce similaire - 2N2918 |
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Description similaire - 2N2918 |
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