PROFET® BTS 707

Semiconductor Group

1

08.96

Smart Two Channel Highside Power Switch

Features

• Overload protection

• Current limitation

• Short-circuit protection

• Thermal shutdown

• Overvoltage protection

• Fast demagnetization of inductive loads

• Open drain diagnostic output

• Open load detection in OFF-state

• CMOS compatible input

• Loss of ground and loss of V

• Electrostatic discharge (ESD) protection

Application

• µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

• Most suitable for inductive loads

• Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection

functions.

Pin Definitions and Functions

Pin

Symbol

Function

1,10,

11,12,

15,16,

19,20

Positive power supply voltage. Design the

wiring for the simultaneous max. short circuit

currents from channel 1 to 2 and also for low

thermal resistance

3

IN1

Input 1,2, activates channel 1,2 in case of

7

IN2

logic high signal

17,18

OUT1

Output 1,2, protected high-side power output

13,14

OUT2

of channel 1,2. Design the wiring for the max.

short circuit current

4

ST1

Diagnostic feedback 1,2 of channel 1,2,

8

ST2

open drain, low in on state on failure or high in

off state on failure

2

GND1

Ground 1 of chip 1 (channel 1)

6

GND2

Ground 2 of chip 2 (channel 2)

5,9

N.C.

Not Connected

1

)

connection, reverse load current limited by connected load.

Product Summary

Overvoltage Protection

65

V

Operating voltage

5.8 ... 58

V

active channels:

one

two parallel

On-state resistance

250

125

m

Ω

Nominal load current

1.9

2.8

A

GND1 2

IN1 3

18 OUT1

ST1 4

17 OUT1

N.C. 5

GND2 6

IN2 7

14 OUT2

ST2 8

13 OUT2

N.C. 9