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STPS20L15DPBF Fiches technique(PDF) 2 Page - Vishay Siliconix |
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STPS20L15DPBF Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 7 page VS-STPS20L15DPbF, VS-STPS20L15D-N3 www.vishay.com Vishay Semiconductors Revision: 30-Aug-11 2 Document Number: 94325 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse width < 300 μs, duty cycle < 2 % ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS Forward voltage drop See fig. 1 VFM (1) 19 A TJ = 25 °C -0.41 V 40 A - 0.52 19 A TJ = 125 °C 0.25 0.33 40 A 0.37 0.50 Reverse leakage current See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR -10 mA TJ = 100 °C - 600 Threshold voltage VF(TO) TJ = TJ maximum 0.182 V Forward slope resistance rt 7.6 m Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF Typical series inductance LS Measured lead to lead 5 mm from package body 8 - nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range TJ - 55 to 125 °C Maximum storage temperature range TStg - 55 to 150 Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 1.5 °C/W Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased (for TO-220) 0.50 Maximum thermal resistance, junction to ambient RthJA DC operation (for D2PAK) 40 Approximate weight 2g 0.07 oz. Mounting torque minimum Non-lubricated threads 6 (5) kgf · cm (lbf · in) maximum 12 (10) Marking device Case style TO-220AC STPS20L15D |
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