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2SCR544R Fiches technique(PDF) 1 Page - Rohm |
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2SCR544R Fiches technique(HTML) 1 Page - Rohm |
1 / 5 page 1/4 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.A Midium Power Transistors (80V / 2.5A) 2SCR544R Structure Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2) High speed switching Applications Driver Inner circuit (Unit : mm) Package Taping Code TL Basic ordering unit (pieces) 3000 2SCR544R Absolute maximum ratings (Ta = 25 °C) Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6V DC IC 2.5 A Pulsed ICP 5A PD 0.5 W PD 1W Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to 150 °C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) Packaging specifications Type Parameter Collector current Power dissipation *1 *2 *3 Abbreviated symbol : NS (1) Base (2) Emitter (3) Collector TSMT3 0~0.1 0.16 0.85 1.0MAX 0.7 (2) (1) (3) 2.9 1.9 0.95 0.95 0.4 (1) Base (2) Emitter (3) Collector (1) (2) (3) |
Numéro de pièce similaire - 2SCR544R_11 |
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Description similaire - 2SCR544R_11 |
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