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SD453NR Fiches technique(PDF) 7 Page - Vishay Siliconix |
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SD453NR Fiches technique(HTML) 7 Page - Vishay Siliconix |
7 / 11 page Document Number: 93176 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 08-Apr-08 7 SD453N/R Series Fast Recovery Diodes (Stud Version), 400/450 A Vishay High Power Products Fig. 22 - Recovery Charge Characteristics Fig. 23 - Recovery Current Characteristics Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 25 - Frequency Characteristics Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 27 - Frequency Characteristics 0 200 400 600 800 1000 1200 0 50 100 150 200 250 300 Rate Of Fa ll Of Forward Current - di/ d t (A/ µs) 500 A 150 A I = 1000 A Sine Pulse FM SD453N/ R..S30 Series T = 150 °C; V > 100V r J 0 50 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 500 A Rate Of Fa ll Of Forward Current - di/ dt (A/ µs) 150 A I = 1000 A Sine Pulse FM SD453N/ R..S30 Series T = 150 °C; V > 100V J r 1E2 1E3 1E4 1E1 1E2 1E3 1E4 1 2 Pulse Basewidth (µs) 10 joules per p ulse 6 4 dv/ dt = 1000V/ µs Sinusoidal Pulse 0.6 0.4 0.2 0.1 SD453N/ R..S20 Series T = 150°C, V = 800V J RRM tp 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) 50 Hz 200 10000 100 4000 dv/ d t = 1000V/ us 400 1000 2000 6000 Sinusoidal Pulse 1500 3000 T = 70°C, V = 800V C RRM SD453N/R..S20 Series tp 600 1E2 1E3 1E4 1E1 1E2 1E3 1E4 1 2 Pulse Basewidth (µs) 4 10 joules per pulse 6 Trapezoidal Pulse 0.8 0.6 SD453N/ R..S20 Series T = 150°C, V = 800V J RRM dv/ dt = 1000V/ µs; d i/ dt = 300A/ µs tp 0.4 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Tra pezoidal Pulse 50 Hz 100 200 400 1000 1500 2000 4000 3000 600 6000 SD453N/R..S20 Series T = 70°C, V = 800V dv/ dt = 1000V/us, d i/ dt = 300A/ us RRM C tp |
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Description similaire - SD453NR |
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