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BAL99-V Fiches technique(PDF) 2 Page - Vishay Siliconix |
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BAL99-V Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 3 page www.vishay.com 2 Document Number 85535 Rev. 1.8, 12-Aug-10 BAL99-V Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in millimeters (inches): SOT-23 Parameter Test condition Symbol Min. Typ. Max. Unit Forward voltage IF = 1 mA VF 715 mV IF = 10 mA VF 855 mV IF = 50 mA VF 1000 mV IF = 150 mA VF 1250 mV Reverse current VR = 70 V IR 2.5 µA VR = 70 V, Tj = 150 °C IR 100 µA VR = 25 V, Tj = 150 °C IR 30 µA Diode capacitance VF = VR = 0, f = 1 MHz CD 1.5 pF Reverse recovery time IF = IR = 10 mA to IR = 1 mA, RL = 100 Ω, VR = 6 V trr 6ns Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 2.35 (0.093) 2.6 (0.102) 0.95 (0.037) 0.95 (0.037) 0.7 (0.028) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.) |
Numéro de pièce similaire - BAL99-V_12 |
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Description similaire - BAL99-V_12 |
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