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STEF12 Fiches technique(PDF) 6 Page - STMicroelectronics |
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STEF12 Fiches technique(HTML) 6 Page - STMicroelectronics |
6 / 20 page Electrical characteristics STEF12 6/20 Doc ID 019056 Rev 3 4 Electrical characteristics VCC = 12 V, VEN = 3.3 V, CI = 10 µF, CO = 47 µF, TJ = 25 °C (unless otherwise specified). Table 6. Electrical characteristics for STEF12 Symbol Parameter Test Conditions Min. Typ. Max. Unit Under/Overvoltage protection VClamp Output clamping voltage VCC = 18 V 13.8 15 16.2 V VUVLO Undervoltage lockout Turn-on, voltage rising 7.7 8.5 9.3 V VHyst UVLO hysteresis 0.80 V Power MOSFET tdly Delay time Enabling of chip to ID = 100 mA with a 1 A resistive load 350 µs RDSon On-resistance (1) 35 53 70 m Ω - 40 °C < TJ < 125 °C (2) 82 VOFF Off state output voltage VCC = 18 V, VGS = 0, RL = infinite 40 100 mV ID Continuous current 0.5in2 pad, TA = 25 °C (1) 3.6 A Minimum copper, TA = 80 °C 1.7 Current limit IShort Short-circuit current limit RLimit = 22 Ω 3.3 4.4 5.5 A ILim Overload current limit RLimit = 22 Ω 4.4 A dv/dt circuit dv/dt Output voltage ramp time Enable to VOUT = 11.7 V, No Cdv/dt 0.5 0.9 2.6 ms Enable/Fault VIL Low level input voltage Output disabled 0.35 0.58 0.81 V VI(INT) Intermediate level input voltage Thermal fault, output disabled 0.82 1.4 1.95 V VIH High level input voltage Output enabled 1.96 2.64 3.3 V VI(MAX) High state maximum voltage 3.4 4.3 5.4 V IIL Low level input current (sink) VEnable = 0 V -10 -30 µA II High level leakage current for external switch VEnable = 3.3 V 1 µA Maximum fan-out for fault signal Total numbers of chips that can be connected to this pin for simultaneous shutdown 3Units Total device IBias Bias current Device operational 1.5 2 mA Thermal shutdown 1 |
Numéro de pièce similaire - STEF12 |
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Description similaire - STEF12 |
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