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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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TS8520VA-SF-F Fiches technique(PDF) 2 Page - Vishay Siliconix |
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TS8520VA-SF-F Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page  TS8520VA www.vishay.com Vishay Semiconductors Rev. 1.1, 20-Feb-12 2 Document Number: 83473 For technical questions, contact: optochipsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating (2) The radiant intensity, Ie, is measured on the geometric axis of the TO-18 header BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Relative Spectral Emission φe rel = f (λ) Fig. 2 - Radiant Characteristics Irel = f( ϕ) Note • All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 250 mA, tp = 20 ms VF 1.8 2.0 V IF = 1.5 A, tp = 100 μs VF 2.8 V Radiant power (1) IF = 100 mA φe 30 mW IF = 250 mA φe 75 mW Radiant intensity (2) IF = 100 mA Ie 7.5 mW/sr Reverse voltage IR = 10 μA VR 10 V Angle of half intensity IF = 250 mA ϕ 50 55 60 deg Peak wavelength IF = 250 mA λp 830 850 870 nm Spectral bandwidth IF = 250 mA λ0.5 30 nm Rise time/fall time IF = 250 mA, RL = 50 Ω tr, tf 15 ns λ- Wavelength (nm) 21776 0 0.25 0.5 0.75 1 650 750 850 950 0.4 0.2 0 94 8013 0.6 0.9 0.8 0° 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 0.508 mm Length of chip edge (y-direction) Ly 0.508 mm Die height H 0.17 mm Diameter of bondpad d 0.107 mm ADDITIONAL INFORMATION Frontside metallization, anode Gold alloy Backside metallization, cathode Gold alloy Dicing Sawing Die bonding technology Epoxy bonding |
Numéro de pièce similaire - TS8520VA-SF-F |
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Description similaire - TS8520VA-SF-F |
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