BFS483 datasheet(1/6 Pages) SIEMENS

No de pièce	BFS483

Description	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA)

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Fabricant	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

1

Dec-16-1996

BFS 483

NPN Silicon RF Transistor

• For low-noise, high-gain broadband amplifier

at colector current from 2mA to 28mA

•

fT = 8GHz

F = 1.2dB at 900MHz

• Two (galvanic) internal isolated

Transistors in one package

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFS 483

RHs

Q62702-F1574

1/4 = B

2/5 = E

3/6 = C

SOT-363

data below is of a single transistor

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCEO

12

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

2

Collector current

IC

65

mA

Base current

IB

5

Total power dissipation

TS ≤ 40 °C

Ptot

450

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

- 65 ... + 150

Storage temperature

Tstg

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

RthJS

≤ 245

K/W

1)

TS is measured on the collector lead at the soldering point to the pcb.

Numéro de pièce similaire - BFS483

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Description similaire - BFS483

Fabricant	No de pièce	Fiches technique	Description
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BFS483 Fiches technique(PDF) 1 Page - Siemens Semiconductor Group

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