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BFP520 Datasheet(Fiches technique) 1 Page - Siemens Semiconductor Group

Numéro de pièce BFP520
Description  NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
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BFP 520
Semiconductor Group
Sep-09-1998
1
SIEGET®45
NPN Silicon RF Transistor
Preliminary data
• For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding
Ga = 20 dB
Noise Figure
F = 0.95 dB
• For oscillators up to 15 GHz
• Transition frequency f
T = 45 GHz
• Gold metalization for high reliability
• SIEGET ® 45 - Line
Siemens Grounded Emitter Transistor
45 GHz
fT - Line
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 520
APs
Q62702-F1794
1 = B
2 = E
3 = C
4 = E
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
2.5
V
Collector-base voltage
VCBO
12
V
Emitter-base voltage
VEBO
1
V
Collector current
IC
40
mA
Base current
IB
4
mA
Total power dissipation,
TS ≤ 105 °C
Ptot
100
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ...+150
°C
Storage temperature
Tstg
-65 ...+150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 450
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group
1
1998-11-01




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