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BF998 Fiches technique(PDF) 3 Page - Siemens Semiconductor Group

No de pièce BF998
Description  Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BF998 Fiches technique(HTML) 3 Page - Siemens Semiconductor Group

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BF 998
Semiconductor Group
3
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Control range
(test circuit 2)
VDS = 8 V, VG2S = 4 … – 2 V
f = 800 MHz
Gps
40
dB
Noise figure
(test circuit 1)
VDS = 8 V, ID = 10 mA, f = 200 MHz,
GG = 2 mS, GL = 0.5 mS, VG2S = 4 V
F
0.6
Noise figure
(test circuit 2)
VDS = 8 V, ID = 10 mA, f = 800 MHz,
GG = 3.3 mS, GL = 1 mS, VG2S = 4 V
F
–1–
Unit
Values
mS
Parameter
Forward transconductance
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 kHz
Symbol
gfs
min.
typ.
24
max.
pF
Gate 1 input capacitance
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 MHz
Cg1ss
2.1
2.5
Gate 2 input capacitance
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 MHz
Cg2ss
1.2
fF
Reverse transfer capacitance
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 MHz
Cdg1
–25
pF
Output capacitance
VDS = 8 V, ID = 10 mA, VG2S = 4 V
f = 1 MHz
Cdss
1.05
dB
Power gain
(test circuit 1)
VDS = 8 V, ID = 10 mA, f = 200 MHz,
GG = 2 mS, GL = 0.5 mS, VG2S = 4 V
Gps
–28
Power gain
(test circuit 2)
VDS = 8 V, ID = 10 mA, f = 800 MHz,
GG = 3.3 mS, GL = 1 mS, VG2S = 4 V
Gps
–20
AC Characteristics


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