BF420 datasheet(2/4 Pages) SIEMENS

No de pièce	BF420

Description	NPN Silicon Transistors With High Reverse Voltage (NPN Silicon Transistors With High Reverse Voltage)

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BF 420

BF 422

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

µA

Collector cutoff current

VCE = 200 V, RBE = 2.7 k , TA = 150 ˚C

Ω

ICER

––10

V

Collector-emitter breakdown voltage

IC = 1 mA

BF 422

V(BR)CE0

250

–

nA

Collector cutoff current

VCB = 200 V

ICB0

––10

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 10

µA

BF 420

BF 422

V(BR)CB0

300

250

–

Emitter-base breakdown voltage, IE = 10

µA

V(BR)EB0

5––

V

Collector-emitter saturation voltage1)

IC = 25 mA, Tj =150 ˚C

VCEsatRF

––20

–

DC current gain

IC = 100

µA, VCE = 20 V

IC = 25 mA, VCE = 20 V

hFE

15

50

–

Emitter cutoff current, VEB = 5 V

IEB0

––10

MHz

Transition frequency

IC = 10 mA, VCE = 10 V, f = 20 MHz

fT

–

100

–

AC characteristics

pF

Output capacitance

VCB = 30 V, f = 1 MHz

Cobo

–

0.8

–

Collector-emitter breakdown voltage

IC = 10

µA, RBE = 2.7 k

BF 420

V(BR)CER

300

–

1)

Pulse test: t

≤ 300 µs, D ≤ 2%.

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BF420 Fiches technique(PDF) 2 Page - Siemens Semiconductor Group

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