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BCX42 Datasheet(Fiches technique) 2 Page - Siemens Semiconductor Group

Numéro de pièce BCX42
Description  PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage)
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Fabricant  SIEMENS [Siemens Semiconductor Group]
Site Internet  http://www.siemens.com/
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Semiconductor Group
2
BCX 42
BSS 63
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
IC = 10 mA
BCX 42
BSS 63
V(BR)CE0
125
100
MHz
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT
150
pF
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–12
AC characteristics
Collector-base breakdown voltage1)
IC = 100
µA
BCX 42
BSS 63
V(BR)CB0
125
110
µA
Collector cutoff current
VCE = 100 V
TA = 85 ˚C
BCX 42
TA = 125 ˚C
BCX 42
ICE0
10
75
Emitter-base breakdown voltage, IE = 10
µA
V(BR)EB0
5––
nA
nA
µA
µA
Collector cutoff current
VCB = 80 V
BSS 63
VCB = 100 V
BCX 42
VCB =80 V, TA = 150 ˚C
BSS 63
VCB = 100 V, TA = 150 ˚C
BCX 42
ICB0
100
100
20
20
nA
Emitter cutoff current, VEB = 4 V
IEB0
100
DC current gain1)
IC = 100
µA, VCE = 1 V
BCX 42
IC = 10 mA,
VCE = 5 V
BSS 63
IC = 20 mA,
VCE = 5 V
BSS 63
IC = 100 mA, VCE = 1 V
BCX 42
IC = 200 mA, VCE = 1 V
BCX 42
hFE
25
30
30
63
40
V
Collector-emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
BCX 42
IC = 25 mA, IB = 2.5 mA
BSS 63
IC = 75 mA, IB = 7.5 mA
BSS 63
VCEsat
0.9
0.25
0.9
Base-emitter saturation voltage1)
IC = 300 mA, IB = 30 mA
BCX 42
VBEsat
1.4
1)
Pulse test:
t
≤ 300 µs, D = 2 %




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