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BUK6C2R1-55C Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BUK6C2R1-55C
Description  N-channel TrenchMOS intermediate level FET
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK6C2R1-55C Fiches technique(HTML) 3 Page - NXP Semiconductors

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BUK6C2R1-55C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 18 January 2012
3 of 13
NXP Semiconductors
BUK6C2R1-55C
N-channel TrenchMOS intermediate level FET
4.
Limiting values
[1]
Accumulated pulse duration not to exceed 5mins.
[2]
-16V accumulated duration not to exceed 168 hrs.
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
55
V
VGS
gate-source voltage
Pulsed
[1] -20
20
V
DC
[2] -16
16
V
ID
drain current
Tmb =25°C; VGS =10V; see Figure 1
-
228
A
Tamb = 100 °C; VGS =10V;
see Figure 1
-
162
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
see Figure 3
-
914
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
-
300
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
228
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
914
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID =120 A; Vsup ≤ 55 V; RGS =50 Ω;
VGS =10V; Tj(init) = 25 °C; unclamped
-
770
mJ
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aaf964
0
50
100
150
200
250
0
50
100
150
200
Tmb (°C)
ID
(A)
Tmb (°C)
0
200
150
50
100
03na19
40
80
120
Pder
(%)
0


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