TSHG8200 datasheet(3/5 Pages) VISHAY

No de pièce	TSHG8200

Description	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 84755

For technical questions, contact: emittertechsupport@vishay.com

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Rev. 1.2, 02-Jul-09

3

TSHG8200

High Speed Infrared Emitting Diode,

830 nm, GaAlAs Double Hetero

Vishay Semiconductors

BASIC CHARACTERISTICS

Tamb = 25 °C, unless otherwise specified

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 5 - Radiant Intensity vs. Forward Current

Fig. 6 - Radiant Power vs. Forward Current

Fig. 7 - Relative Radiant Power vs. Wavelength

Fig. 8 - Relative Radiant Intensity vs. Angular Displacement

100

1000

0.01

0.1

1

10

100

t

P - Pulse Duration (ms)

16031

t

P/T = 0.01

0.05

0.2

0.5

0.1

0.02

T

amb < 50 °C

18873

1000

100

10

1

V

F - Forward Voltage (V)

02

4

t

P = 100 µs

t

P/T = 0.001

13

0.1

1

10

100

1000

1

10

100

1000

16032

I

F - Forward Current (mA)

0.1

1

10

100

1000

110

100

1000

16971

IF - Forward Current (mA)

740

800

λ- Wavelength (nm)

900

16972_1

0

0.25

0.5

0.75

1.0

1.25

0.4

0.2

0

15989

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

Numéro de pièce similaire - TSHG8200

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TSHG8200	109Kb / 5P	High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero Rev. 1.1, 04-Sep-08
	TSHG8200	113Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG8200	112Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG8200	113Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG8200	112Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 01-Jan-2023

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TSHG5510	95Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero Rev. 1.2, 23-Aug-11
	TSHG8200	113Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG5510	92Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 01-Jan-2023
	VSMG2720	133Kb / 6P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero Rev. 1.3, 24-Sep-13
	VSMG2720	144Kb / 6P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG8400	104Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 01-Jan-2022
	VSMG2700	137Kb / 6P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero Rev. 1.3, 03-Nov-09
	TSHG8400	103Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 01-Jan-2023
	VSMG2700	131Kb / 6P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero Rev. 1.4, 24-Sep-13
	TSHG5510	104Kb / 5P	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero Rev. 1.1, 25-Jun-09

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