TSHG5410_09 datasheet(2/5 Pages) VISHAY

No de pièce	TSHG5410

Description	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 81811

2

Rev. 1.2, 08-Jul-09

TSHG5410

Vishay Semiconductors High Speed Infrared Emitting Diode,

850 nm, GaAlAs Double Hetero

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

Note

Tamb = 25 °C, unless otherwise specified

0

20

40

60

80

100

120

140

160

180

200

010

20

30

40

50

60

70

80

90 100

21142

T

amb - Ambient Temperature (°C)

R

thJA = 230 K/W

0

20

40

60

80

100

120

0

10

203040

506070

80

90 100

T

amb - Ambient Temperature (°C)

21143

R

thJA = 230 K/W

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

1.5

1.8

V

IF = 1 A, tp = 100 µs

VF

2.3

V

Temperature coefficient of VF

IF = 1 mA

TKVF

- 1.8

mV/K

Reverse current

VR = 5 V

IR

10

µA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

125

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

45

90

135

mW/sr

IF = 1 A, tp = 100 µs

Ie

900

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms

φ

e

55

mW

Temperature coefficient of

φ

e

IF = 100 mA

TK

φ

e

- 0.35

%/K

Angle of half intensity

ϕ

± 18

deg

Peak wavelength

IF = 100 mA

λ

p

820

850

880

nm

Spectral bandwidth

IF = 100 mA

Δλ

40

nm

Temperature coefficient of

λ

p

IF = 100 mA

TK

λ

p

0.25

nm/K

Rise time

IF = 100 mA

tr

20

ns

Fall time

IF = 100 mA

tf

13

ns

Cut-off frequency

IDC = 70 mA, IAC = 30 mA pp

fc

18

MHz

Virtual source diameter

d

2.1

mm

Numéro de pièce similaire - TSHG5410_09

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TSHG5410	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
	TSHG5410	108Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG5410	107Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023

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Description similaire - TSHG5410_09

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TSHG6410	103Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 08-Jul-09
	TSHG6200	116Kb / 6P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.6, 04-Dec-07
	TSHG5410	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
	TSHG6200	110Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHG5210	107Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG6410	112Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHG5210	113Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSHG6210	112Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	VSMG3700	127Kb / 6P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.4, 06-Oct-10
	TSHG6400	103Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.1, 29-Jun-09
	TSHG6400	106Kb / 5P	High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Rev. 1.2, 23-Aug-11

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