TSHF5410 datasheet(4/5 Pages) VISHAY

No de pièce	TSHF5410

Description	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

Download	5 Pages

Scroll/Zoom	100%

Fabricant	VISHAY [Vishay Siliconix]

Site Internet	http://www.vishay.com

Logo

4 / 5 page

www.vishay.com

For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81303

4

Rev. 1.3, 25-Jun-09

TSHF5410

Vishay Semiconductors High Speed Infrared Emitting Diode,

890 nm, GaAlAs Double Hetero

PACKAGE DIMENSIONS in millimeters

1.1 ± 0.25

0.5

+ 0.15

- 0.05

Ø 5 ± 0.15

2.54 nom.

0.5

+ 0.15

- 0.05

Area not plane

technical drawings

according to DIN

specifications

6.544-5258.06-4

Issue: 3; 19.05.09

95 11260

A

C

R2.49 (sphere)

Numéro de pièce similaire - TSHF5410

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TSHF5410	116Kb / 6P	High Speed Infrared Emitting Diode in T-1 3/4 Package Rev. 1.1, 26-Oct-06
	TSHF5410	110Kb / 5P	High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero Rev. 1.2, 04-Sep-08
	TSHF5410	110Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.4, 24-Aug-11
	TSHF5410	109Kb / 5P	High Speed Infrared Emitting Diode, 890 nm,GaAlAs Double Hetero 01-Jan-2022
	TSHF5410	108Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2023

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TSHF6410	111Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSSF4500	96Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.7, 24-Aug-11
	VSMF3710	143Kb / 6P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2022
	VSMF3710	149Kb / 7P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.7, 03-Nov-09
	TSHF6410	113Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2023
	TSHF5410	110Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.4, 24-Aug-11
	VSMF3710	132Kb / 6P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 2.0, 02-Nov-15
	TSHF6210	111Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero Rev. 1.2, 25-Jun-09
	TSHF5210	109Kb / 5P	High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 01-Jan-2022
	TSHF5410	109Kb / 5P	High Speed Infrared Emitting Diode, 890 nm,GaAlAs Double Hetero 01-Jan-2022