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TP0610K Fiches technique(PDF) 2 Page - Vishay Siliconix |
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TP0610K Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model TP0610K SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 2.8 V On-State Drain Current a ID(on) VDS = −10 V, VGS = −10 V 2.2 A VGS = −10 V, ID = −500 mA 3 3.1 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −25 mA 4.4 5.5 Ω Forward Transconductance a gfs VDS = −10 V, ID = −500 mA 170 180 mS Diode Forward Voltage a VSD IS = −200 mA, VGS = 0 V −0.75 −0.90 V Dynamic b Total Gate Charge Qg 0.50 Gate-Source Charge Qgs 0.12 0.12 Gate-Drain Charge Qgd VDS = −30 V, VGS = −10 V, ID = −500 mA 0.14 0.14 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. 2 www.vishay.com Document Number: 73270 S-52635 Rev. B, 02-Jan-06 |
Numéro de pièce similaire - TP0610K_06 |
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Description similaire - TP0610K_06 |
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