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CSD97370Q5M Fiches technique(PDF) 10 Page - Texas Instruments

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No de pièce CSD97370Q5M
Description  Synchronous Buck NexFET??Power Stage
Download  18 Pages
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

CSD97370Q5M Fiches technique(HTML) 10 Page - Texas Instruments

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background image
S0489-03
PWM
ENABLE
PWM
GND
BST
DRVH
LL
DRVL
HSgate
LSgate
A
V
V
InputVoltage
(V
IN)
OutputCurrent
)
(I
OUT
InputCurrent
)
(I
IN
GateDrive
Current
)
(I
DD
GateDrive
Voltage
)
(V
DD
V
DD
V
AveragedSwitched
NodeVoltage
(V
)
SW_AVG
A
Averaging
Circuit
Control
FET
Sync
FET
A
CSD97370Q5M
L
OUT
Boot
Boot_R
C
Boot
C
IN
V
IN
V
SW
V
SW
P
GND
V
DD
C
OUT
V
OUT
V
IN
CSD97370Q5M
SLPS314B
– JUNE 2011 – REVISED OCTOBER 2011
www.ti.com
APPLICATION INFORMATION
The Power Stage CSD97370Q5M is a highly optimized design for synchronous buck applications using NexFET
devices with a 5V gate drive. The Control FET and Sync FET silicon are parametrically tuned to yield the lowest
power loss and highest system efficiency. As a result, a rating method is used that is tailored towards a more
systems centric environment. The high-performance gate driver IC integrated in the package helps minimize the
parasitics and results in extremely fast switching of the power MOSFETs. System level performance curves such
as Power Loss, Safe Operating Area and normalized graphs allow engineers to predict the product performance
in the actual application.
Power Loss Curves
MOSFET centric parameters such as RDS(ON) and Qgd are primarily needed by engineers to estimate the loss
generated by the devices. In an effort to simplify the design process for engineers, Texas Instruments has
provided measured power loss performance curves. Figure 7 plots the power loss of the CSD97370Q5M as a
function of load current. This curve is measured by configuring and running the CSD97370Q5M as it would be in
the final application (see Figure 18). The measured power loss is the CSD97370Q5M device power loss which
consists of both input conversion loss and gate drive loss. Equation 1 is used to generate the power loss curve.
Power Loss = (VIN x IIN) + (VDD x IDD) – (VSW_AVG x IOUT)
(1)
The power loss curve in Figure 7 is measured at the maximum recommended junction temperature of
TJ = 125°C under isothermal test conditions.
Safe Operating Curves (SOA)
The SOA curves in the CSD97370Q5M datasheet give engineers guidance on the temperature boundaries within
an operating system by incorporating the thermal resistance and system power loss. Figure 9, Figure 10, and
Figure 11 outline the temperature and airflow conditions required for a given load current. The area under the
curve dictates the safe operating area. All the curves are based on measurements made on a PCB design with
dimensions of 4.0" (W) x 3.5" (L) x 0.062" (T) and 6 copper layers of 1 oz. copper thickness.
Normalized Curves
The normalized curves in the CSD97370Q5M data sheet give engineers guidance on the Power Loss and SOA
adjustments based on their application specific needs. These curves show how the power loss and SOA
boundaries will adjust for a given set of systems conditions. The primary Y-axis is the normalized change in
power loss and the secondary Y-axis is the change is system temperature required in order to comply with the
SOA curve. The change in power loss is a multiplier for the Power Loss curve and the change in temperature is
subtracted from the SOA curve.
Figure 18. Power Loss Test Circuit
10
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Copyright
© 2011, Texas Instruments Incorporated


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