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CSD86330Q3D Fiches technique(PDF) 7 Page - Texas Instruments

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No de pièce CSD86330Q3D
Description  Synchronous Buck NexFET??Power Block
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

CSD86330Q3D Fiches technique(HTML) 7 Page - Texas Instruments

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VDS - Drain-to-Source Voltage - V
0
5
10
15
20
25
0.001
0.01
0.1
1
10
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G016
f = 1MHz
VGS = 0V
VDS - Drain-to-Source Voltage - V
0
5
10
15
20
25
0.01
0.1
1
10
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G017
f = 1MHz
VGS = 0V
TC - Case Temperature - °C
-75
-25
25
75
125
175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
G018
ID = 250µA
TC - Case Temperature - °C
-75
-25
25
75
125
175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
G019
ID = 250µA
VGS - Gate-to-Source Voltage - V
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
TC = 25°C
TC = 125°C
G020
ID = 14A
VGS - Gate-to-Source Voltage - V
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
TC = 25°C
TC = 125°C
G021
ID = 14A
CSD86330Q3D
www.ti.com
SLPS264C
– OCTOBER 2010 – REVISED OCTOBER 2011
TYPICAL POWER BLOCK MOSFET CHARACTERISTICS (continued)
TA = 25°C, unless stated otherwise.
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 16. Control MOSFET Capacitance
Figure 17. Sync MOSFET Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 18. Control MOSFET VGS(th)
Figure 19. Sync MOSFET VGS(th)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 20. Control MOSFET RDS(on) vs VGS
Figure 21. Sync MOSFET RDS(on) vs VGS
Copyright
© 2010–2011, Texas Instruments Incorporated
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