Document Number: 89411

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Revision: 19-Apr-11

3

This document is subject to change without notice.

SS1H9, SS1H10

Vishay General Semiconductor

New Product

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

T

T

T

T

Instantaneous Forward Voltage (V)

100

10

1

0.1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.01

0.1

1

10

100

1000

10 000

10

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

10

100

1000

0.1

1

10

100

Reverse Voltage (V)

1

10

100

0.01

0.1

1

10

100

t - Pulse Duration (s)

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)