SIZ790DT-T1-GE3 datasheet(8/14 Pages) VISHAY

No de pièce	SIZ790DT-T1-GE3

Description	Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode

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Document Number: 67669

S11-0607-Rev. A, 04-Apr-11

Vishay Siliconix

SiZ790DT

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

20

40

60

80

100

0.0

0.5

1.0

1.5

2.0

V

DS - Drain-to-Source Voltage (V)

V

GS = 10 V thru 4 V

V

GS = 3 V

0.0030

0.0035

0.0040

0.0045

0.0050

0.0055

0.0060

0

20

40

60

80

100

I

D -Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0

2

4

6

8

10

0

10

20

30

40

Q

g - Total Gate Charge (nC)

I

D = 20 A

V

DS = 24 V

V

DS = 15 V

V

DS = 7.5 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V

GS - Gate-to-Source Voltage (V)

T

C = - 55 °C

T

C = 25 °C

T

C = 125 °C

0

500

1000

1500

2000

2500

0

5

10

15

20

25

30

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

I

D = 20 A

V

GS = 4.5 V

V

GS = 10 V

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Description similaire - SIZ790DT-T1-GE3

Fabricant	No de pièce	Fiches technique	Description
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Vishay Siliconix	SIZ790DT	215Kb / 14P	Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode 08-Feb-17
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Vishay Telefunken	SIZ902DT	223Kb / 14P	Dual N-Channel 30 V (D-S) MOSFETs
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SIZ790DT-T1-GE3 Fiches technique(PDF) 8 Page - Vishay Siliconix

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