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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SIZ704DT-T1-GE3 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SIZ704DT-T1-GE3 Fiches technique(HTML) 1 Page - Vishay Siliconix |
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1 / 12 page  Vishay Siliconix SiZ704DT New Product Document Number: 65367 S09-1921-Rev. A, 28-Sep-09 www.vishay.com 1 N-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Channel-1 30 0.024 at VGS = 10 V 12a 3.8 nC 0.030 at VGS = 4.5 V 12a Channel-2 30 0.0135 at VGS = 10 V 16a 7.3 nC 0.017 at VGS = 4.5 V 16a Ordering Information: SiZ704DT-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 G2 S2 S2 D1 D1 1 6 5 4 2 3 3.73 mm 6.00 mm PowerPAIR™ 6 x 3.7 D1 S1/D2 Pin 1 GHS GLS GND GND VIN VIN 1 6 5 4 2 3 VIN VSW VIN/D1 GND/S2 N-Channel 2 MOSFET N-Channel 1 MOSFET GHS/G1 VSW/S1/D2 GLS/G2 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 72 °C/W for Channel-1 and 67 °C/W for Channel-2. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 12a 16a A TC = 70 °C 12a 16a TA = 25 °C 9.4b, c 14b, c TA = 70 °C 7.5b, c 11.2b, c Pulsed Drain Current IDM 30 40 Source Drain Current Diode Current TC = 25 °C IS 12a 16a TA = 25 °C 3.1b, c 3.7b, c Single Pulse Avalanche Current L = 0.1 mH IAS 10 15 Single Pulse Avalanche Energy EAS 511 mJ Maximum Power Dissipation TC = 25 °C PD 20 30 W TC = 70 °C 12.9 19 TA = 25 °C 3.7b, c 4.5b, c TA = 70 °C 2.4b, c 2.9b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 26 34 21 28 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.7 6.2 3.2 4.2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • POL • Low Current DC/DC |
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