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SIB800EDK Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SIB800EDK Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 11 page www.vishay.com 2 Document Number: 68860 S-83045-Rev. B, 22-Dec-08 Vishay Siliconix SiB800EDK New Product Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 125 °C/W. Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)b, f t ≤ 5 s RthJA 90 115 °C/W Maximum Junction-to-Case (Drain) (MOSFET) Steady State RthJC 32 40 Maximum Junction-to-Ambient (Schottky)b, f t ≤ 5 s RthJA 90 115 Maximum Junction-to-Case (Drain) (Schottky) Steady State RthJC 32 40 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 21 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 2.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 3 V ± 1 µA VDS = 0 V, VGS = ± 6 V ± 1 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 4 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 1.6 A 0.183 0.225 Ω VGS = 2.5 V, ID = 1.5 A 0.220 0.270 VGS = 1.8 V, ID = 1.3 A 0.275 0.345 VGS = 1.5 V, ID = 0.3 A 0.320 0.960 Forward Transconductancea gfs VDS = 10 V, ID = 1.6 A 3.5 S Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 1.7 A 1.1 1.7 nC Gate-Source Charge Qgs 0.2 Gate-Drain Charge Qgd 0.1 Gate Resistance Rg f = 1 MHz 200 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 20 30 ns Rise Time tr 12 20 Turn-Off DelayTime td(off) 70 105 Fall Time tf 20 30 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 1.5 A Pulse Diode Forward Current ISM 4 Body Diode Voltage VSD IS = 1.3 A, VGS = 0 V 0.9 1.2 V |
Numéro de pièce similaire - SIB800EDK |
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Description similaire - SIB800EDK |
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