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SIB800EDK Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SIB800EDK
Description  N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Document Number: 68860
S-83045-Rev. B, 22-Dec-08
Vishay Siliconix
SiB800EDK
New Product
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 125 °C/W.
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)b, f
t
≤ 5 s
RthJA
90
115
°C/W
Maximum Junction-to-Case (Drain) (MOSFET)
Steady State
RthJC
32
40
Maximum Junction-to-Ambient (Schottky)b, f
t
≤ 5 s
RthJA
90
115
Maximum Junction-to-Case (Drain) (Schottky)
Steady State
RthJC
32
40
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
21
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 2.3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.4
1.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 3 V
± 1
µA
VDS = 0 V, VGS = ± 6 V
± 1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
4
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 1.6 A
0.183
0.225
Ω
VGS = 2.5 V, ID = 1.5 A
0.220
0.270
VGS = 1.8 V, ID = 1.3 A
0.275
0.345
VGS = 1.5 V, ID = 0.3 A
0.320
0.960
Forward Transconductancea
gfs
VDS = 10 V, ID = 1.6 A
3.5
S
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 1.7 A
1.1
1.7
nC
Gate-Source Charge
Qgs
0.2
Gate-Drain Charge
Qgd
0.1
Gate Resistance
Rg
f = 1 MHz
200
Ω
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 7.7 Ω
ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω
20
30
ns
Rise Time
tr
12
20
Turn-Off DelayTime
td(off)
70
105
Fall Time
tf
20
30
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1.5
A
Pulse Diode Forward Current
ISM
4
Body Diode Voltage
VSD
IS = 1.3 A, VGS = 0 V
0.9
1.2
V


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