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SIB415DK Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SIB415DK Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model SiB415DK SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 2 V On-State Drain Current a ID(on) VDS ≥ −5 V, VGS = −10 V 58 A VGS = −10 V, ID = −4.17 A 0.073 0.072 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −3.1 A 0.124 0.130 Ω Forward Transconductance a gfs VDS = −15 V, ID = −4.17 A 8 5.5 S Diode Forward Voltage a VSD IS = −3.2 A −0.83 −0.80 V Dynamic b Input Capacitance Ciss 345 295 Output Capacitance Coss 72 70 Reverse Transfer Capacitance Crss VDS = −15 V, VGS = 0 V, f = 1 MHz 51 50 pF VDS = −15 V, VGS = −10 V, ID = −4.17 A 5.6 6.7 Total Gate Charge Qg 3 3.5 Gate-Source Charge Qgs 1 1 Gate-Drain Charge Qgd VDS = −15 V, VGS = −4.5 V, ID = −4.17 A 1.78 1.78 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74873 S-71023 Rev. A, 14-May-07 |
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