Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

SIA910EDJ Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SIA910EDJ
Description  Dual N-Channel 12-V (D-S) MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIA910EDJ Fiches technique(HTML) 1 Page - Vishay Siliconix

  SIA910EDJ Datasheet HTML 1Page - Vishay Siliconix SIA910EDJ Datasheet HTML 2Page - Vishay Siliconix SIA910EDJ Datasheet HTML 3Page - Vishay Siliconix SIA910EDJ Datasheet HTML 4Page - Vishay Siliconix SIA910EDJ Datasheet HTML 5Page - Vishay Siliconix SIA910EDJ Datasheet HTML 6Page - Vishay Siliconix SIA910EDJ Datasheet HTML 7Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 1 / 7 page
background image
Vishay Siliconix
SiA910EDJ
New Product
Document Number: 65535
S09-2267-Rev. A, 02-Nov-09
www.vishay.com
1
Dual N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
12
0.028 at VGS = 4.5 V
4.5
6.2 nC
0.033 at VGS = 2.5 V
4.5
0.042 at Vgs = 1.8 V
4.5
S1
D1
G2
S2
G1
D2
1
6
5
4
2
3
2.05 mm
2.05 mm
PowerPAK SC-70-6 Dual
D1
D2
Ordering Information: SiA910EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
X X X
C F X
Lot Traceability
and Date code
Part # code
N-Channel MOSFET
N-Channel MOSFET
S2
D2
G2
S1
D1
G1
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
12
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4.5a
A
TC = 70 °C
4.5a
TA = 25 °C
4.5a, b, c
TA = 70 °C
4.5a, b, c
Pulsed Drain Current
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C
IS
4.5a
TA = 25 °C
1.6b, c
Maximum Power Dissipation
TC = 25 °C
PD
7.8
W
TC = 70 °C
5
TA = 25 °C
1.9b, c
TA = 70 °C
1.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t
≤ 5 s
RthJA
52
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
12.5
16
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Typical ESD Protection: 2400 V
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch for Portable Applications
High Frequency dc-to-dc Converter
DC/DC Converter


Numéro de pièce similaire - SIA910EDJ

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Telefunken
SIA910EDJ TFUNK-SIA910EDJ Datasheet
276Kb / 9P
   Dual N-Channel 12 V (D-S) MOSFET
logo
Vishay Siliconix
SIA910EDJ VISHAY-SIA910EDJ Datasheet
279Kb / 9P
   Dual N-Channel 12 V (D-S) MOSFET
01-Jan-2022
SIA910EDJ VISHAY-SIA910EDJ_V01 Datasheet
279Kb / 9P
   Dual N-Channel 12 V (D-S) MOSFET
01-Jan-2022
More results

Description similaire - SIA910EDJ

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix
SI7940DP VISHAY-SI7940DP Datasheet
52Kb / 5P
   Dual N-Channel 12-V (D-S) MOSFET
Rev. B, 29-Jul-02
logo
Analog Power
AM6900NHE ANALOGPOWER-AM6900NHE Datasheet
401Kb / 5P
   Dual N-Channel 12-V (D-S) MOSFET
logo
Vishay Siliconix
SI7234DP VISHAY-SI7234DP Datasheet
512Kb / 13P
   Dual N-Channel 12-V (D-S) MOSFET
Rev. A, 02-Jun-08
logo
Vishay Telefunken
SI7234DP TFUNK-SI7234DP Datasheet
343Kb / 13P
   Dual N-Channel 12-V (D-S) MOSFET
SIA910EDJ TFUNK-SIA910EDJ Datasheet
276Kb / 9P
   Dual N-Channel 12 V (D-S) MOSFET
logo
Vishay Siliconix
SIA912DJ VISHAY-SIA912DJ_V01 Datasheet
113Kb / 7P
   Dual N-Channel 12-V (D-S) MOSFET
01-Jan-2022
logo
DinTek Semiconductor Co...
DTSP1204 DINTEK-DTSP1204 Datasheet
712Kb / 8P
   Dual N-Channel 12-V (D-S) MOSFET
logo
Vishay Siliconix
SIA912DJ VISHAY-SIA912DJ Datasheet
114Kb / 7P
   Dual N-Channel 12-V (D-S) MOSFET
Rev. B, 03-Mar-08
SI7940DP VISHAY-SI7940DP_V01 Datasheet
304Kb / 12P
   Dual N-Channel 12-V (D-S) MOSFET
01-Jan-2022
SIA910EDJ VISHAY-SIA910EDJ_V01 Datasheet
279Kb / 9P
   Dual N-Channel 12 V (D-S) MOSFET
01-Jan-2022
More results


Html Pages

1 2 3 4 5 6 7


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com