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SIA778DJ-T1-GE3 Fiches technique(PDF) 10 Page - Vishay Siliconix |
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SIA778DJ-T1-GE3 Fiches technique(HTML) 10 Page - Vishay Siliconix |
10 / 12 page www.vishay.com 10 Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 Vishay Siliconix SiA778DJ New Product CHANNEL 2 TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 1 2 3 4 0 25 50 75 100 125 150 Package Limited TC - Case Temperature (°C) Power Derating 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) |
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