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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SIA778DJ-T1-GE3 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SIA778DJ-T1-GE3 Fiches technique(HTML) 1 Page - Vishay Siliconix |
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1 / 12 page  Vishay Siliconix SiA778DJ New Product Document Number: 65669 S10-0046-Rev. A, 11-Jan-10 www.vishay.com 1 N-Channel 12 V and 20 V (D-S) MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Performance for Channel 2: 2800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • N-Channel Level Shift Load Switch for Portable Devices - for 0 V to 8 V Power Lines Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile ( www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for channel 1 and channel 2 is 110 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Channel 1 12 0.029 at VGS = 4.5 V 4.5a 5.6 nC 0.034 at VGS = 2.5 V 4.5a 0.044 at VGS = 1.8 V 4.5a 0.065 at VGS = 1.5 V 4.5a Channel 2 20 0.225 at VGS = - 4.5 V 1.5a 1.1 nC 0.270 at VGS = - 2.5 V 1.5a 0.345 at VGS = - 1.8 V 1.5a 0.960 at VGS = - 1.5 V 0.5a Ordering Information: SiA778DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel 1 MOSFET G1 D1 S1 N-Channel 2 MOSFET Marking Code X X X C G X Lot Traceability and Date Code Part # code S1 D1 G2 S2 G1 D2 1 6 5 4 2 3 2.05 mm 2.05 mm PowerPAK SC-70-6 Dual D1 D2 D2 S2 G2 200 Ω ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel 1 Channel 2 Unit Drain-Source Voltage VDS 12 20 V Gate-Source Voltage VGS ± 8 ± 6 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.5a 1.5a A TC = 70 °C 4.5a 1.5a TA = 25 °C 4.5a, b, c 1.5b, c TA = 70 °C 4.5a, b, c 1.5b, c Pulsed Drain Current IDM 20 4 Source Drain Current Diode Current TC = 25 °C IS 4.5a 1.5a TA = 25 °C 1.6b, c 1.5b, c Maximum Power Dissipation TC = 25 °C PD 6.5 5 W TC = 70 °C 53.2 TA = 25 °C 1.9b, c 1.9b, c TA = 70 °C 1.2b, c 1.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Channel 1 Channel 2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 52 65 52 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 12.5 16 20 25 |
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