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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SIA519EDJ-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SIA519EDJ-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 14 page  www.vishay.com 2 Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 Vishay Siliconix SiA519EDJ New Product Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 20 V VGS = 0 V, ID = - 250 µA P-Ch - 20 VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA N-Ch 23 mV/°C ID = - 250 µA P-Ch - 11 VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA N-Ch - 3.3 ID = - 250 µA P-Ch 2.6 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.6 1.4 V VDS = VGS, ID = - 250 µA P-Ch - 0.5 - 1.3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V N-Ch ± 0.5 µA P-Ch ± 0.5 VDS = 0 V, VGS = ± 12 V N-Ch ± 90 P-Ch ± 8 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 4.5 V N-Ch 10 A VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 10 Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 4.2 A N-Ch 0.032 0.040 Ω VGS = - 4.5 V, ID = - 2.9 A P-Ch 0.074 0.090 VGS = 2.5 V, ID = 3.3 A N-Ch 0.053 0.065 VGS = - 2.5 V, ID = - 2.3 A P-Ch 0.113 0.137 Forward Transconductanceb gfs VDS = 10 V, ID = 4.2 A N-Ch 12 S VDS = - 10 V, ID = - 2.9 A P-Ch 7 Dynamica Input Capacitance Ciss N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz N-Ch 350 pF P-Ch 340 Output Capacitance Coss N-Ch 82 P-Ch 105 Reverse Transfer Capacitance Crss N-Ch 50 P-Ch 95 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 5.5 A N-Ch 7.7 12 nC VDS = - 10 V, VGS = - 10 V, ID = - 3.7 A P-Ch 10.5 16 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 5.5 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 3.7 A N-Ch 3.7 6 P-Ch 5.3 8 Gate-Source Charge Qgs N-Ch 0.85 P-Ch 0.75 Gate-Drain Charge Qgd N-Ch 0.95 P-Ch 2 Gate Resistance Rg f = 1 MHz N-Ch 0.7 3.5 7 Ω P-Ch 0.2 10 20 |
Numéro de pièce similaire - SIA519EDJ-T1-GE3 |
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Description similaire - SIA519EDJ-T1-GE3 |
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