This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

1

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Vishay Siliconix

SPICE Device Model Si9407BDY

Document Number: 64135

S-82080-Rev. A, 08-Sep-08

P-Channel 60-V (D-S) MOSFET

CHARACTERISTICS

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the - 55 °C to 125 °C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The

attached

spice

model

describes

the

typical

electrical

characteristics of the P-channel vertical DMOS.

The subcircuit

model is extracted and optimized over the - 55 °C to 125

°C

temperature ranges under the pulsed 0 V to 10 V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC