SI7980DP-T1-E3 datasheet(10/18 Pages) VISHAY

No de pièce	SI7980DP-T1-E3

Description	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

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Document Number: 68391

S-83039-Rev. C, 29-Dec-08

Vishay Siliconix

Si7980DP

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

6

13

19

26

32

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Package Limited

Power Derating, Junction-to-Case

0.0

5.4

10.8

16.2

21.6

27.0

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.4

0.8

1.2

1.6

2.0

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

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SI7980DP-T1-E3 Fiches technique(PDF) 10 Page - Vishay Siliconix

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