SI7904BDN-T1-GE3 datasheet(5/13 Pages) VISHAY

No de pièce	SI7904BDN-T1-GE3

Description	Dual N-Channel 20-V (D-S) MOSFET

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Document Number: 74409

S-83050-Rev. B, 29-Dec-08

www.vishay.com

5

Vishay Siliconix

Si7904BDN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

TC - Case Temperature (°C)

0

5

10

15

20

25

0

255075

100

125

150

Power Derating

C - Case Temperature (°C)

T

0

5

10

15

20

25

50

75

100

125

150

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SI7904BDN-T1-GE3 Fiches technique(PDF) 5 Page - Vishay Siliconix

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