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SI7634BDP-T1-E3 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI7634BDP-T1-E3 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7634BDP New Product Document Number: 74031 S-80439-Rev. C, 03-Mar-08 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested APPLICATIONS • Notebook PC Core - Low Side - High Side PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 30 0.0054 at VGS = 10 V 40g 21.5 nC 0.007 at VGS = 4.5 V 40g Ordering Information: Si7634BDP-T1-E3 (Lead (Pb)-free) Si7634BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK SO-8 Bottom View N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed cop- per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. g. Package Limited. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 40g A TC = 70 °C 40g TA = 25 °C 22.5b, c TA = 70 °C 18.0b, c Pulsed Drain Current IDM 70 Continuous Source-Drain Diode Current TC = 25 °C IS 40g TA = 25 °C 4.5b, c Single Pulse Avalanche Current L = 0.1 mH IAS 30 Single Pulse Avalanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 48 W TC = 70 °C 31 TA = 25 °C 5.0b, c TA = 70 °C 3.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 20 25 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 2.1 2.6 RoHS COMPLIANT |
Numéro de pièce similaire - SI7634BDP-T1-E3 |
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Description similaire - SI7634BDP-T1-E3 |
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