Moteur de recherche de fiches techniques de composants électroniques |
|
SI7216DN-T1-GE3 Fiches technique(PDF) 5 Page - Vishay Siliconix |
|
SI7216DN-T1-GE3 Fiches technique(HTML) 5 Page - Vishay Siliconix |
5 / 14 page Document Number: 73771 S11-1142-Rev. C, 13-Jun-11 www.vishay.com 5 Vishay Siliconix Si7216DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0 0.2 0.4 0.6 0.8 1 10 100 0.1 0.01 0.001 150 °C 25 C VSD -Source-to-Drain Voltage (V) - 0.8 - 0.6 - 0.4 - 0.2 0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID = 5 mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 01 23 45 6 7 8 910 25 °C 125 °C VGS - Gate-to-Source Voltage (V) 0 30 50 10 20 Time (s) 40 10 1000 1 0.1 0.001 100 0.01 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0.01 0.1 1 10 100 0.1 1 10 100 1 ms 10 ms 100 ms DC 10 s TA = 25 °C Single Pulse Limited by RDS(on)* 1 s |
Numéro de pièce similaire - SI7216DN-T1-GE3 |
|
Description similaire - SI7216DN-T1-GE3 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |