Vishay Siliconix

Si7186DP

Document Number: 69257

S09-0271-Rev. B, 16-Feb-09

www.vishay.com

1

N-Channel 80-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

•

•

100 % UIS Tested

APPLICATIONS

•

Primary Side Switch

•

POL

•

Intermediate Bus Converter

PRODUCT SUMMARY

a

80

46 nC

Ordering Information: Si7186DP-T1-E3 (Lead (Pb)-free)

Si7186DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 65 °C/W.

g. Package Limited.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

80

V

Gate-Source Voltage

± 20

A

Pulsed Drain Current

60

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

L = 0.1 mH

30

Single Pulse Avalanche Energy

45

mJ

Maximum Power Dissipation

64

W

44

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 10 s

18

23

°C/W

Maximum Junction-to-Case (Drain)

Steady State

1.0

1.5